蓝鲸体育直播

Applications

Colocalized AFM-Raman Analysis of 2D Materials Heterostructures

True colocalized topographic, electrical, and chemical characterization of Van der Waals heterostructures

This application note reports on colocalized AFM-Raman measurements of vertical Van der Waals heterostructures of 2D materials: hBN/graphene/WSe₂ and graphite gate/hBN/bilayer graphene/hBN. Topographic, contact potential difference, and Raman data are generated on same location with the same tip using a fully integrated AFM-Raman microscope, the new SignatureSPM.